1.2μm emitting VECSEL based on type-II aligned QWs

C. Möller, C. Berger, C. Fuchs, A. Ruiz Perez, Stephan W Koch, Jorg Hader, Jerome V Moloney, W. Stolz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Since the invention of VECSELs, their great spectral coverage has been demonstrated and emission wavelengths in the range from UV to almost MIR have been achieved. However, in the infrared regime the laser performance is affected by Auger losses which become significant at large quantum defects. In order to reduce the Auger losses and to develop more efficient devices in the IR, type-II aligned QWs have been suggested as alternative gain medium for semiconductor lasers.

Original languageEnglish (US)
Title of host publicationVertical External Cavity Surface Emitting Lasers (VECSELs) VI
EditorsKeith G. Wilcox
PublisherSPIE
ISBN (Electronic)9781628419696
DOIs
StatePublished - 2016
EventVertical External Cavity Surface Emitting Lasers (VECSELs) VI - San Francisco, United States
Duration: Feb 15 2016Feb 16 2016

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9734
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherVertical External Cavity Surface Emitting Lasers (VECSELs) VI
Country/TerritoryUnited States
CitySan Francisco
Period2/15/162/16/16

Keywords

  • VECSEL
  • Vertical-external-cavity surface-emitting laser
  • semiconductor disk laser
  • type-II quantum well

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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